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TPCC8065-H,LQ(S

Part No TPCC8065-H,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8TSON-ADV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1350pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Maximum Rds On at Id,Vgs 11.4 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1111133-TPCC8065-H,LQ(S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8065-H,LQ(S CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 13A @ 25°C.

  • Maximum Power Dissipation: 700mW (Ta) and 18W (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 200μA
  • Maximum Rds On @ Id, Vgs: 11.4 mOhm @ 6.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 20nC @ 10V
  • Package: 8-TSON Advance (3.3x3.3)
  • Mounting: SMD (SMT)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,925+ $0.0300 $57.7500
4,550+ $0.0254 $115.5700
7,145+ $0.0243 $173.6235
10,000+ $0.0231 $231.0000
12,500+ $0.0231 $288.7500
16,670+ $0.0208 $346.7360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,800 pieces
MOQ: 1925 pcs
Order Increment : 1 pcs
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