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Same model may have multiple batches, images only for reference.
TPCC8105,L1Q Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

TPCC8105,L1Q

Part No TPCC8105,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description PB-F POWER MOSFET TRANSISTOR TSO
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT);
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
Ultra Librarian 3D Model Ultra Librarian TPCC8105,L1Q CAD Model

Description

8-VDFN Exposed Pad

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4647 $51.1170
230+ $0.4353 $100.1190
360+ $0.4206 $151.4160
515+ $0.3912 $201.4680
665+ $0.3765 $250.3725
830+ $0.3618 $300.2940
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Availability: 29,630 pieces
MOQ: 110 pcs
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