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TPCF8302(TE85L,F)

Part No TPCF8302(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Transistor -20V, -3A, 1.35W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 3 A
Current Rating -3 A
Drain to Source Breakdown Voltage -20 V
Drain to Source Resistance 59 mΩ
Fall Time 17 ns
Gate to Source Voltage (Vgs) 10 V
Lead Free Lead Free
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Cut Tape
Power Dissipation 1.35 W
Radiation Hardening No
Rise Time 6.2 ns
RoHS Compliant
Voltage Rating (DC) -20 V
Win Source Part Number 1214781-TPCF8302(TE85L,F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCF8302(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage TPCF8302(TE85L,F) is a surface mount transistor that is categorized under transistors - FETs, MOSFETs - RF.

  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Voltage Rating (DC): -20 V
  • Continuous Drain Current (ID): 3 A
  • Drain to Source Breakdown Voltage: -20 V
  • Drain to Source Resistance: 59 mΩ
  • Gate to Source Voltage (Vgs): 10 V
  • Power Dissipation: 1.35 W
  • RoHS Compliant: Yes
  • Lead-Free: Yes
  • Rise Time: 6.2 ns
  • Fall Time: 17 ns
  • Packaging: Cut Tape
  • Pins: 8
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
715+ $0.1617 $115.6155
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,970+ $0.1467 $288.9990
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,103 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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