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Same model may have multiple batches, images only for reference.
TPCF8B01 Real Image
Same model may have multiple batches, images only for reference.

TPCF8B01

Part No TPCF8B01
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A VS-8
Datasheet
TPCF8B01 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 6nC @ 5V
Max Input Capacitance 470pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 330mW (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 1.4A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Dimension 8-SMD, Flat Lead
Win Source Part Number 097651-TPCF8B01
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCF8B01 CAD Model

Description

The Toshiba Semiconductor and Storage 097651-TPCF8B01 is a P-Channel MOSFET with a Schottky Diode (Isolated) FET feature.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.7A @ 25°C
  • Mounting: SMD (SMT)
  • Maximum Rds On: 110 mOhm @ 1.4A, 4.5V
  • Status: Obsolete (EOL)
  • Operating Temperature: 150°C (TJ)

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