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Same model may have multiple batches, images only for reference.
TPCM8001-H(TE12L,Q
Same model may have multiple batches, images only for reference.

TPCM8001-H(TE12L,Q

Part No TPCM8001-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 30V 20A 8-PIN TSSOP T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 20 A
Current Rating 20 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 9.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Fall Time 41 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 1.13 nF
Lead Free Yes
Max Power Dissipation 30 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 30 W
Rds On Max 9.5 mΩ
Resistance 9.5 mΩ
Rise Time 70 ns
RoHS Compliant
Turn-Off Delay Time 57 ns
Voltage Rating (DC) 30 V
Win Source Part Number 1009511-TPCM8001-H(TE12L,Q
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCM8001-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCM8001-H(TE12L,Q) is a surface-mount RF MOSFET transistor with a current rating of 20A and a drain-to-source voltage of 30V.

  • Current Rating: 20A
  • Drain-to-Source Voltage: 30V
  • Power Dissipation: 30W
  • Resistance: 9.5 mΩ
  • Number of Pins: 8
  • Packaging: Tape and Reel
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55°C to 150°C

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