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TPCP8003-H

Part No TPCP8003-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.2A PS-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 7.5nC @ 10V
Max Input Capacitance 360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 840mW (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 1.1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PS-8 (2.9x2.4)
Dimension 8-SMD, Flat Lead
Win Source Part Number 043263-TPCP8003-H
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCP8003-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance discrete semiconductor product that is widely used in various electronic devices.

  • Popularity: High
  • Supply and Demand: Balanced
  • Manufacturer: Toshiba
  • Performance: Excellent
  • Design: High power and efficiency, low profile

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