The TPH2R306NH,L1Q is a MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

• GPTDescription: It has a medium popularity and is readily available in the market.
• GPTDescription: This transistor is designed to be used in electronic devices that require a high-performance N-Channel MOSFET transistor.
• GPTDescription: It has a maximum power dissipation of 1.6W and a continuous drain current of 60A @ 25°C.
• GPTDescription: The TPH2R306NH,L1Q also has a low gate-source threshold voltage of 4V and a maximum gate charge of 72nC @ 10V.