The TPH4R50ANH is an N-channel power MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications. It features a low drain-source on-resistance (RDS(on)), which minimizes power loss during switching, leading to improved energy efficiency. Its robust design makes it suitable for demanding applications where reliability and performance are critical.

Applications

• DC-DC converters: Used in voltage regulation and power conversion.
• AC-DC power supplies: Employed in converting AC voltage to DC voltage for various electronic devices.
• Motor control circuits: Suitable for controlling the speed and direction of motors.
• Power management systems: Integrated into systems for efficient power distribution and control.
• Synchronous rectification: Used to improve the efficiency of power supplies.

Features

• N-channel MOSFET: Offers efficient switching characteristics.
• Low drain-source on-resistance (RDS(on)): Minimizes power loss and improves efficiency.
• High drain current (ID): Capable of handling substantial current loads.
• High avalanche energy: Provides robustness against voltage spikes and surges.
• Surface mount package: Facilitates automated assembly and compact design.
• Lead-free construction: Compliant with environmental regulations.

Benefits

• Increased energy efficiency: The low RDS(on) reduces power dissipation, leading to higher efficiency in power conversion applications.
• Improved thermal performance: Lower power loss results in reduced heat generation, enhancing the overall thermal performance of the system.
• Enhanced reliability: Robust design ensures stable and reliable operation even under harsh conditions.
• Compact design: The surface mount package allows for smaller and more compact circuit designs.
• Simplified circuit design: The well-defined characteristics of the MOSFET simplify the design and implementation of power switching circuits.
• Compliance with environmental standards: Lead-free construction ensures compliance with environmental regulations, such as RoHS.

Additional Details

The TPH4R50ANH typically comes in a surface-mount package, such as DPAK or similar, which allows for efficient heat dissipation. The gate threshold voltage (VGS(th)) is designed to ensure proper turn-on and turn-off behavior. It also incorporates protection features such as avalanche ruggedness, which protects the MOSFET from voltage transients. The device is designed for use in high-frequency switching applications, offering fast switching speeds and low gate charge. The absolute maximum ratings for drain-source voltage (VDS) and gate-source voltage (VGS) must be strictly adhered to in order to prevent damage to the device.