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Same model may have multiple batches, images only for reference.
TPH5900CNH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPH5900CNH,L1Q

Part No TPH5900CNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 9A 8SOP
Datasheet
TPH5900CNH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 600pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 59 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111184-TPH5900CNH,L1Q
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPH5900CNH,L1Q CAD Model

Description

The TPH5900CNH,L1Q is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Device Category: discrete semiconductor product
  • Product Family: MOSFET
  • Power Dissipation: 1.6W (Ta), 42W (Tc)
  • Drain-Source Breakdown Voltage: 150V

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5490 $52.1550
225+ $0.4505 $101.3625
345+ $0.4364 $150.5580
475+ $0.4223 $200.5925
615+ $0.4082 $251.0430
820+ $0.3660 $300.1200
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Availability: 21,508 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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