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Same model may have multiple batches, images only for reference.
TPN14006NH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPN14006NH,L1Q

Part No TPN14006NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 13A 8TSON-ADV / Trans MOSFET N-CH 60V 33A 8-Pin TSON Advance T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Vgs(th) (Maximum) @ Id 4V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700mW (Ta), 30W (Tc)
Rds On (Maximum) @ Id, Vgs 14 mOhm @ 6.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSON Advance (3.3x3.3)
Package 8-PowerVDFN
Win Source Part Number 797857-TPN14006NH,L1Q
Popularity Medium
Supply and Demand Status Limited
Family Name TPN14006NH
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TPN14006NH,L1Q CAD Model

Description

The Toshiba TPN14006NH,L1Q, a MOSFET from Toshiba, belongs to the U-MOSVIII-H series.

  • Package: 8-PowerVDFN
  • Temperature Range: 150°C (TJ)
  • Maximum Continuous Drain Current: 13A (Ta)
  • Maximum Power Dissipation: 700mW (Ta), 30W (Tc)
  • Gate Charge (Qg): 15nC @ 10V
  • Input Capacitance (Ciss): 1300pF @ 30V
  • Maximum Vgs: ±20V
  • Rds On: 14 mOhm @ 6.5A, 10V
  • Suitable for: discrete semiconductor products
  • Estimated EOL Date: 2030

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