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TPN2R203NC,L1Q

Part No TPN2R203NC,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 30V 45A 8-TSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2mOhm at 22.5A, 10V
Vgs(th) (Maximum) at Id 2.3V at 500μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2230pF at 15V
Power Dissipation (Maximum) 700mW , 42W (Tc)
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-TSON Advance (3.3x3.3)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 5,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 801907-TPN2R203NC,L1Q
Ultra Librarian 3D Model Ultra Librarian TPN2R203NC,L1Q CAD Model

Description

The TPN2R203NC,L1Q is an N-Channel MOSFET (Metal Oxide) integrated circuit (IC) manufactured by Toshiba Semiconductor and Storage.

  • Package: 8-PowerVDFN
  • Manufacturer Pack Quantity: 5,000
  • Mounting Style: SMD
  • Drain to Source Voltage (Vdss): 30V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Power Dissipation (Maximum): 700mW
  • Temperature Range - Operating: 150°C
  • MSL Level: 1 (Unlimited)
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2230pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6983 $59.1728
39+ $3.0342 $118.3338
59+ $2.9395 $173.4305
82+ $2.8448 $233.2736
105+ $2.7501 $288.7605
141+ $2.4659 $347.6919
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,271 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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