The TPN6R303NC,LQ is an electronic component manufactured by Toshiba Semiconductor and Storage.

• Manufacturer: Toshiba Semiconductor and Storage
• Type: N-Channel MOSFET
• Power Dissipation (Max): 700mW (Ta), 19W (Tc)
• Package: 8-TSON Advance (3.3x3.3)
• Mounting: SMT
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current @ 25°C: 20A (Ta)
• Gate-Source Threshold Voltage: 2.3V @ 200μA
• Maximum Gate Charge: 24nC @ 10V
• Maximum Input Capacitance: 1370pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 6.3 mOhm @ 10A, 10V