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Same model may have multiple batches, images only for reference.
TPW4R50ANH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPW4R50ANH,L1Q

Part No TPW4R50ANH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 92A 8DSOP
Datasheet
TPW4R50ANH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5200pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta), 142W (Tc)
Rds On (Maximum) @ Id, Vgs 4.5 mOhm @ 46A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-DSOP Advance
Package 8-PowerWDFN
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 750314-TPW4R50ANH,L1Q
Popularity Medium
Supply and Demand Status Sufficient
Family Name TPW4R50ANH
Introduction Date August 27, 2015
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2033
Ultra Librarian 3D Model Ultra Librarian TPW4R50ANH,L1Q CAD Model

Description

The TPW4R50ANH,L1Q is a MOSFET from Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Package: 8-PowerWDFN
  • Current continuous drain (Id) @ 25°C: 92A (Tc)
  • Maximum power dissipation: 800mW (Ta), 142W (Tc)
  • Input capacitance (Ciss): 5200pF @ 50V
  • Maximum Vgs(th): 4V @ 1mA
  • Supply and demand status: Sufficient

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