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MTP6P20E

Part No MTP6P20E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 6A TO-220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 208921-MTP6P20E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MTP6P20E CAD Model

Description

ON Semiconductor MTP6P20E P-Channel MOSFET

The MTP6P20E is a high-performance P-Channel Power MOSFET brought to you by ON Semiconductor, a leading supplier in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of a variety of applications, offering efficient power management with reduced energy loss.

With its P-Channel configuration, the MTP6P20E is optimized for use in low-side switching applications. It is commonly utilized in power supply circuits, motor controls, and other power management tasks that require high-speed switching and reliability. The device is capable of handling a continuous drain current of up to 6A, making it suitable for moderate power applications.

The MTP6P20E operates at a drain-source voltage of -200V, providing ample headroom for a variety of applications that require high voltage operation. Its low threshold voltage ensures that it can be driven by low-voltage control signals, making it compatible with modern microcontrollers and logic-level devices.

One of the key features of the MTP6P20E is its low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency. This characteristic is particularly important in applications where energy efficiency is a priority, such as battery-powered devices and renewable energy systems.

The device is housed in a TO-220 package, which is known for its robustness and excellent thermal characteristics. This package allows for efficient heat dissipation, ensuring that the MOSFET operates within its safe temperature range even under high load conditions. The TO-220 package also provides convenient mounting options for heat sinks, further enhancing its thermal performance.

In summary, the ON Semiconductor MTP6P20E P-Channel MOSFET is a versatile and efficient solution for a wide range of power management applications. Its high voltage capability, low on-resistance, and robust TO-220 package make it an ideal choice for designers looking to enhance the performance and reliability of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2807 $64.0350
110+ $1.0508 $115.5880
175+ $1.0180 $178.1500
235+ $0.9852 $231.5220
305+ $0.9523 $290.4515
410+ $0.8538 $350.0580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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