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TRS8A65F,S1Q

Name: TRS8A65F,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 1014432
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	TRS8A65F,S1Q
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Diodes, Rectifiers - Single
Description	PB-F DIODE TO-220-2L V=650 IF=8A / Diode Silicon Carbide Schottky 650 V 8A (DC) Through Hole TO-220F-2L
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	8A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 8 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	40 µA @ 650 V
Capacitance @ Vr, F	28pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Supplier Device Package	TO-220F-2L
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS8A65
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	264-TRS8A65FS1Q,TRS8A65F,S1Q(S2
Standard Package	50
Win Source Part Number	1014432-TRS8A65F,S1Q
Ultra Librarian 3D Model	Ultra Librarian TRS8A65F,S1Q CAD Model

Alternative Products

Description

This electronic component is a Silicon Carbide Schottky diode manufactured by Toshiba Semiconductor and Storage.

Package: TO-220-2 Full Pack
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Operating Temperature - Junction: 175°C (Max)
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single

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