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U1GWJ49(TE12L,F)

Part No U1GWJ49(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 40V 1A PWMINI / Diode Schottky 40 V 1A Surface Mount PW-MINI
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Obsolete
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 550 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 500 µA @ 40 V
Mounting SMD (SMT)
Package / Case TO-243AA
Supplier Device Package PW-MINI
Operating Temperature - Junction -40°C ~ 125°C
Base Product Number U1GWJ49
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1,000
Win Source Part Number 1101763-U1GWJ49(TE12L,F)
Ultra Librarian 3D Model Ultra Librarian U1GWJ49(TE12L,F) CAD Model

Description

The Toshiba Semiconductor and Storage U1GWJ49 Schottky diode is a fast recovery diode with a maximum reverse voltage of 40V and an average rectified current of 1A.

  • Maximum Reverse Voltage: 40V
  • Average Rectified Current: 1A
  • Low Forward Voltage: 550mV @ 1A
  • Reverse Leakage Current: 500µA @ 40V
  • Package: TO-243AA
  • Supplied in: Tape and Reel
  • Operating Temperature Range: -40°C to 125°C

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