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Same model may have multiple batches, images only for reference.
ULN2003APGCNHZA Real Image
Same model may have multiple batches, images only for reference.

ULN2003APGCNHZA

Part No ULN2003APGCNHZA
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Darlington NPN 50V 0.5A 16-Pin PDIP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package PDIP
Collector Emitter Saturation Voltage 1.6 V
Collector Emitter Voltage (VCEO) 50 V
hFE Min 1000
Max Operating Temperature 85 °C
Min Operating Temperature -40 °C
Mount Through Hole
Number of Elements 7
Number of Pins 16
Output Type TTL
Polarity NPN
Power Dissipation 1.47 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1176332-ULN2003APGCNHZA
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ULN2003APGCNHZA CAD Model

Description

The ULN2003APGCNHZA is an RF transistor manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: Limited
  • Mount: Through-Hole
  • RoHS Compliant: Yes
  • Collector-Emitter Voltage: 50V
  • hFE min: 1000

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5001 $60.0120
285+ $0.4100 $116.8500
440+ $0.3973 $174.8120
605+ $0.3846 $232.6830
780+ $0.3719 $290.0820
1,040+ $0.3338 $347.1520
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Availability: 18,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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