The TSA18N50MR is a high-voltage N-channel MOSFET from Truesemi, designed for power switching applications requiring efficient performance and robust reliability. It is manufactured using advanced trench MOSFET technology, offering low on-resistance and gate charge, which contribute to reduced power losses and improved switching speeds.

Applications

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)
• DC-DC converters
• Motor control

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High avalanche energy capacity
• Fast switching speed
• High ruggedness
• Lead-free and RoHS compliant

Benefits

• Improved energy efficiency due to reduced conduction and switching losses.
• Reduced heat dissipation simplifies thermal management.
• Enhanced system reliability because of high avalanche energy capability and ruggedness.
• Faster switching frequencies enabling compact designs.
• Environmentally friendly due to compliance with RoHS standards.

Additional Details

The TSA18N50MR features a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) rating of 18A. The RDS(on) is typically very low, minimizing power dissipation. It is available in a TO-220 package. Its gate threshold voltage is optimized for ease of use with standard gate drive circuits. This MOSFET is suitable for use in a wide range of high-voltage, high-frequency power conversion applications.

The device's advanced technology ensures stable operation and long-term reliability, making it a suitable choice for demanding applications where efficiency and robustness are critical.