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Same model may have multiple batches, images only for reference.
HCT802 Real Image
Same model may have multiple batches, images only for reference.

HCT802

Part No HCT802
Manufacturer TT Electronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 90V 2A/1.1A SMD
Datasheet
HCT802 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer TT Electronics/Optek Technology
Packaging Bulk
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 90V
Continuous Drain Current at 25°C 2A, 1.1A
Maximum Rds On at Id,Vgs 5 Ohm @ 1A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 70pF @ 25V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-SMD
Win Source Part Number 1030782-HCT802
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian HCT802 CAD Model

Description

The TT Electronics/Optek Technology FET HCT802 is a N and P-channel standard FET designed for use in discrete semiconductor products.

  • Channel Type: N and P-Channel
  • Type: Standard FET
  • Category: Discrete Semiconductor Products
  • Mounting Type: SMD (SMT)
  • Package: Bulk
  • Drain-Source Breakdown Voltage: 90V
  • Continuous Drain Current @ 25°C: 2A, 1.1A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Input Capacitance: 70pF @ 25V
  • Maximum Rds On @ Id,Vgs: 5 Ohm @ 1A, 10V
  • Product Status: Active
  • Supply and Demand: Medium
  • Package Quantity: 1 unit

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