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12N60L-TA3-T

Part No 12N60L-TA3-T
Manufacturer UTC
Catalog Hard To Find
Description 12A, 600V N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer UTC
Win Source Part Number 1121227-12N60L-TA3-T
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 12N60L-TA3-T CAD Model

Description

The 12N60L-TA3-T is an N-channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It's designed for use in various power switching applications requiring high voltage and low on-resistance.

Applications

  • Switch-Mode Power Supplies (SMPS): Used in power supplies for computers, TVs, and other electronic devices.
  • Power Factor Correction (PFC): Employed in PFC circuits to improve power efficiency.
  • Electronic Ballasts: Found in lighting applications to drive fluorescent and LED lamps.
  • DC-DC Converters: Utilized for voltage regulation in various electronic systems.
  • Motor Control: Can be used in controlling the speed of DC motors.

Features

  • N-Channel MOSFET: Provides efficient switching with a positive gate voltage requirement.
  • Enhancement Mode: Requires a gate voltage to turn the device on.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • High Voltage Capability: Designed to withstand high drain-source voltages.
  • Fast Switching Speed: Allows for efficient high-frequency operation.

Benefits

  • High Efficiency: Low RDS(on) minimizes power dissipation, improving overall system efficiency.
  • Reliable Operation: Designed for stable and dependable performance in demanding conditions.
  • Simplified Design: Easy to integrate into power switching circuits.
  • Reduced Heat Generation: Lower power dissipation reduces the need for extensive heat sinking.
  • Improved System Performance: Fast switching speeds contribute to better overall system performance.

Specifications (Typical)

  • Drain-Source Voltage (VDS): 600V
  • Gate-Source Voltage (VGS): ±30V
  • Continuous Drain Current (ID): 12A (at Tc=25°C)
  • Pulsed Drain Current (IDM): 36A
  • Power Dissipation (PD): 45W (at Tc=25°C)
  • Operating Temperature Range: -55°C to +150°C
  • RDS(on) @ VGS=10V: Typically around 0.7 Ohms
  • Package: TO-220

Additional Details: This MOSFET is typically mounted on a heatsink to manage thermal dissipation. Refer to the manufacturer's datasheet for detailed electrical characteristics, thermal resistance, and safe operating area (SOA) information.

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