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4N60G-TM3-T

Part No 4N60G-TM3-T
Manufacturer UTC
Catalog Hard To Find
Description 4A, 600V N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
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Manufacturer UTC
Win Source Part Number 1128882-4N60G-TM3-T
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 4N60G-TM3-T CAD Model

Description

The 4N60G-TM3-T is a N-channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for high-voltage, high-speed switching applications. This MOSFET utilizes advanced technology to achieve low on-resistance and gate charge, contributing to efficient power conversion.

Applications:

  • Switching Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Electronic Ballasts for Lighting
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)

Features:

  • N-Channel Enhancement Mode
  • Low On-Resistance (RDS(on))
  • High Voltage (600V) Capability
  • Fast Switching Speed
  • Low Gate Charge (Qg)
  • Avalanche Energy Rated
  • Lead-Free and RoHS Compliant

Benefits:

  • High Efficiency in Power Conversion Applications
  • Reduced Power Losses Due to Low On-Resistance
  • Suitable for High-Voltage Applications
  • Improved System Reliability
  • Simplified Thermal Management
  • Environmentally Friendly Due to Lead-Free Construction

Additional Details:

The 4N60G-TM3-T is typically housed in a TO-220 package, which provides good thermal dissipation characteristics. The maximum drain-source voltage (VDS) is 600V, and the continuous drain current (ID) is typically around 4A, but this depends on the case temperature. The gate-source voltage (VGS) is usually rated at ±30V. The on-resistance (RDS(on)) is a key parameter, and it is specified at a given gate-source voltage and drain current. The total gate charge (Qg) is also an important parameter, as it affects the switching speed and efficiency. The avalanche energy rating indicates the MOSFET's ability to withstand transient voltage spikes.

This MOSFET is commonly used in applications where efficient and reliable power switching is required. Its low on-resistance minimizes conduction losses, while its fast switching speed reduces switching losses. The high voltage capability allows it to be used in high-voltage power supplies and converters. The avalanche energy rating provides added protection against voltage transients. The lead-free construction makes it compliant with environmental regulations.

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