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UT4812G-S08-R

Part No UT4812G-S08-R
Manufacturer UTC
Catalog Electronic Wholesale
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278541-UT4812G-S08-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UT4812G-S08-R CAD Model

Description

The UT4812G-S08-R is a P-Channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for power management applications requiring efficient switching and low on-resistance.

Applications:

  • Load Switching: Used for controlling power to various loads in electronic systems.
  • DC-DC Converters: Employed in DC-DC converters for voltage regulation and power conversion.
  • Power Management in Portable Devices: Suitable for power management in battery-powered devices.
  • Motor Control: Applied in low-power motor control circuits.
  • LED Lighting: Used in LED lighting applications for dimming and switching.

Features:

  • P-Channel MOSFET: Provides efficient power switching in a P-channel configuration.
  • Low On-Resistance (RDS(on)): Minimizes power losses and improves efficiency.
  • Logic Level Gate Drive: Allows direct drive from logic circuits.
  • Surface Mount Package: SOT-23 package for compact designs.
  • RoHS Compliant: Environmentally friendly, lead-free design.

Benefits:

  • High Efficiency: Low RDS(on) reduces power dissipation, improving overall efficiency.
  • Compact Design: Small SOT-23 package allows for space-saving designs.
  • Easy to Use: Logic level gate drive simplifies control circuitry.
  • Reliable Performance: Designed for stable and reliable operation.
  • Environmentally Friendly: RoHS compliant, minimizing environmental impact.

Technical Specifications:

  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -2.5A
  • Pulsed Drain Current (IDM): -10A
  • Operating Temperature Range: -55°C to +150°C
  • RDS(on) @ VGS=-4.5V: 90 mΩ (typical)

The UT4812G-S08-R comes in a SOT-23 surface mount package, making it suitable for high-density PCB layouts. This MOSFET is designed to provide efficient and reliable power switching for a variety of applications.

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