The UT85N03G-TN3-T is an N-channel enhancement mode power MOSFET from United Test and Assembly Center (UTC). This MOSFET is designed for applications requiring efficient power switching, offering a combination of low on-resistance (RDS(on)) and fast switching speeds.

Applications

• DC-DC converters
• Power management in portable devices
• Load switching
• Motor control circuits

Features

• N-Channel Enhancement Mode MOSFET
• Low RDS(on) for reduced conduction losses
• Fast Switching Speed
• Low Gate Charge
• Lead-Free Package

Benefits

• Improved energy efficiency in power supplies
• Reduced heat generation
• Simplified thermal management
• Increased system reliability
• Environmentally friendly due to lead-free construction

Additional Details

The UT85N03G-TN3-T features a drain-source voltage (VDS) rating of 30V. The continuous drain current (ID) rating varies based on the case temperature. The gate-source voltage (VGS) is typically rated at ±20V. The key features of this MOSFET are its low RDS(on), which minimizes conduction losses, and its fast switching speed, which reduces switching losses. These characteristics contribute to high efficiency in power switching applications. The low gate charge (Qg) reduces the drive power requirements, further enhancing overall efficiency. The device is typically available in a surface-mount package suitable for automated assembly. It is compliant with RoHS standards. For accurate design and application, it is essential to refer to the official datasheet provided by UTC.

The UT85N03G is a suitable choice for applications requiring high efficiency and low power dissipation. Always check the datasheet for the most current specifications and application guidelines.