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UTC4N60G

Part No UTC4N60G
Manufacturer UTC
Catalog HOT - SALES and EOL Components (U - Z)
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Manufacturer UTC
Win Source Part Number 396789-UTC4N60G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UTC4N60G CAD Model

Description

The UTC4N60G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for high-voltage, high-speed switching applications, commonly used in power supplies, motor control, and lighting systems. This device features a robust design suitable for demanding applications.

Applications:

  • Switching Power Supplies: Used as a switching element in AC-DC and DC-DC power supplies.
  • Motor Control: Implemented in motor control circuits for efficient power switching.
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting.
  • DC-AC Inverters: Employed in DC-AC inverters for converting DC power to AC power.
  • Power Amplifiers: Used in power amplifier stages for high-power switching.

Features:

  • N-Channel MOSFET: Offers efficient switching characteristics.
  • High Voltage: Typically rated for 600V or higher drain-source voltage (Vds).
  • Low On-Resistance (RDS(on)): Minimizes power dissipation during conduction.
  • Fast Switching Speed: Enables high-frequency switching operation.
  • Avalanche Rated: Withstands transient voltage spikes and overvoltage conditions.

Benefits:

  • High Efficiency: Low RDS(on) reduces power losses and improves efficiency.
  • Reliable: Designed for robust performance in demanding applications.
  • Fast Switching: Enables high-frequency operation, reducing the size of passive components.
  • Protection: Avalanche rating provides protection against voltage transients.
  • Versatile: Suitable for a wide range of power switching applications.

The UTC4N60G N-channel MOSFET provides efficient and reliable switching performance. Its low on-resistance minimizes power dissipation, contributing to higher overall system efficiency. It is crucial to ensure proper heat sinking to manage thermal dissipation, especially at high switching frequencies and high current levels. Detailed specifications, including voltage ratings, current ratings, and thermal characteristics, can be found in the datasheet, which should be consulted before implementation.

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