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4N06L30

Part No 4N06L30
Manufacturer VBsemi
Catalog Custom Parts (0 - A)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1119179-4N06L30
Categories Custom Parts
Manufacturer VBsemi
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 4N06L30 CAD Model

Description

The 4N06L30 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by VBsemi. MOSFETs are widely used in electronic circuits as switching devices or amplifiers due to their high input impedance and fast switching speeds.

Applications:

  • DC-DC Converters: Used as switching elements in DC-DC converters for voltage regulation.
  • Motor Control: Employed in motor control circuits for efficient power switching.
  • Power Management: Used in power management circuits for controlling power distribution.
  • LED Lighting: Used as switching devices in LED lighting applications for brightness control.
  • Load Switching: Used for switching various loads in electronic systems.

Features:

  • N-Channel MOSFET: N-channel enhancement mode MOSFET.
  • Low On-Resistance (RDS(on)): Low RDS(on) for efficient power switching.
  • Fast Switching Speed: Fast switching speed for high-frequency applications.
  • Surface Mount Package: Designed for surface mount assembly on PCBs.
  • Low Gate Threshold Voltage: Low gate threshold voltage for easy driving.

Benefits:

  • Efficient Power Switching: Low on-resistance minimizes power losses, improving efficiency.
  • Fast Switching: Fast switching speed enables high-frequency operation.
  • Compact Design: Small surface mount package allows for high-density board designs.
  • Easy to Use: Low gate threshold voltage simplifies driving requirements.
  • Reliable Operation: Designed for reliable operation in various electronic circuits.

Additional Details:

The 4N06L30 MOSFET typically features a gate threshold voltage of around 2-4V and a drain-source voltage rating of 60V. The continuous drain current rating is typically in the range of several amperes. The RDS(on) value is a key parameter, indicating the resistance between the drain and source when the MOSFET is turned on. A lower RDS(on) value results in lower power dissipation and higher efficiency.

For detailed specifications, refer to the VBsemi datasheet for the 4N06L30. This will include information regarding the gate charge, input capacitance, output capacitance, and other relevant parameters. The datasheet will also provide information on the thermal resistance and safe operating area, which are important for thermal management and ensuring reliable operation.

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