The Vishay Semiconductor Diodes Division component is a high-quality semiconductor device that is designed for use in discrete semiconductor products.

• GPTDescription: This device has a voltage-zener (Nom) (Vz) of 4.3V and a tolerance of ±5%.
• GPTDescription: The impedance (Maximum) (Zzt) of this device is 2 kOhms.
• GPTDescription: This device is available in a DO-204AH, DO-35, Axial package and is packaged in a tape and reel.
• GPTDescription: The maximum power of this device is 500mW.
• GPTDescription: The voltage-forward (Vf) (Maximum) @ If is 1.1V @ 200mA.
• GPTDescription: The current-reverse leakage @ Vr is 5μA @ 1V.
• GPTDescription: This device is obsolete and has a medium popularity.