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Same model may have multiple batches, images only for reference.
IRF520STRR Real Image
Same model may have multiple batches, images only for reference.

IRF520STRR

Part No IRF520STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.2A D2PAK
Datasheet
IRF520STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046506-IRF520STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF520STRR CAD Model

Description

The Vishay IRF520STRR is an N-channel MOSFET power transistor with a maximum power dissipation of 3.7W (Ta) and 60W (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.2A (Tc)
  • Maximum Rds On: 270 mOhm @ 5.5A, 10V
  • Category: Discrete semiconductor products
  • Drive Voltage: 10V
  • Mounting: Surface mount technology
  • Package: Reel - TR
  • Lifecycle Status: Active
  • Supply and Demand: Balance

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