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SI2333CDS-T1-E3

Part No SI2333CDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 7.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 4.5V
Max Input Capacitance 1225pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028389-SI2333CDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2333CDS-T1-E3 CAD Model

Description

The Vishay SI2333CDS-T1-E3 MOSFET is a high-performance electronic component designed for use in a wide range of applications.

  • Maximum Power Dissipation: 1.25W
  • Manufacturer: Vishay
  • Category: Discrete semiconductor products
  • Form factor: Small
  • Ideal for: Space-constrained applications
  • Supply and demand status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3900 $50.7000
315+ $0.3200 $100.8000
485+ $0.3100 $150.3500
670+ $0.3000 $201.0000
865+ $0.2900 $250.8500
1,155+ $0.2600 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,560 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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