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Same model may have multiple batches, images only for reference.
IRF644N Real Image
Same model may have multiple batches, images only for reference.

IRF644N

Part No IRF644N
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) | MOSFET N-CH 250V 14A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 240mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 54nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1060pF at 25V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187123-IRF644N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF644N CAD Model

Description

The IRF644N is an electronic component manufactured by Vishay Siliconix.

  • Type: N-channel MOSFET
  • Maximum Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 14A
  • Maximum On-Resistance: 240mOhm @ 8.4A and 10V
  • Designed for: power supplies, DC-DC converters, and motor control

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