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IRF644PBF

Part No IRF644PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 250V 14A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017457-IRF644PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF644
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF644PBF CAD Model

Description

The Vishay IRF644PBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 280 mOhm @ 8.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1300pF @ 25V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Halogen-Free: Compliant
  • Estimated EOL Date: 2027
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0692 $53.4600
100+ $1.0016 $100.1600
160+ $0.9677 $154.8320
225+ $0.9000 $202.5000
290+ $0.8662 $251.1980
365+ $0.8324 $303.8260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,690 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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