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IRF830

Part No IRF830
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.5A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046755-IRF830
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF830 CAD Model

Description

The Vishay MOSFET is a discrete semiconductor product that is used for various applications.

  • Polarity: N-channel
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Power Dissipation (Max): 74W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-220AB
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 610pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 1.5 Ohm @ 2.7A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1483 $50.4220
825+ $0.1217 $100.4025
1,275+ $0.1179 $150.3225
1,755+ $0.1141 $200.2455
2,270+ $0.1103 $250.3810
3,035+ $0.0989 $300.1615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,540 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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