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Same model may have multiple batches, images only for reference.
IRF830LPBF Real Image
Same model may have multiple batches, images only for reference.

IRF830LPBF

Part No IRF830LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.5A TO-262
Datasheet
IRF830LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046756-IRF830LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF830LPBF CAD Model

Description

The Vishay IRF830LPBF is an N-channel MOSFET designed for discrete semiconductor products.

  • Channel Type: N-Channel
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 3.1W (Ta) and 74W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-262-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 1.5 Ohm @ 2.7A, 10V
  • Supply and Demand Status: Balanced

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