The Vishay IRF830SPBF MOSFET is a discrete semiconductor product that comes in a tube/rail package.

• Type: N-Channel
• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current @ 25°C: 4.5A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 38nC @ 10V
• Maximum Input Capacitance: 610pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 1.5 Ohm @ 2.7A, 10V
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Operating Temperature Range: -55°C to 150°C (TJ)
• Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Supply and Demand Status: Limited