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Same model may have multiple batches, images only for reference.
IRF840A Real Image
Same model may have multiple batches, images only for reference.

IRF840A

Part No IRF840A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | MOSFET N-CH 500V 8A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 4.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1018pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187402-IRF840A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF840A CAD Model

Description

The Vishay Siliconix IRF840A is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vds - Drain-Source Breakdown Voltage: 500V
  • Id - Continuous Drain Current: 8A
  • Rds On (Maximum) @ Id, Vgs: 850mOhm @ 4.8A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1018pF @ 25V
  • Power Dissipation (Maximum): 125W
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: This product has a limited supply and demand status and is currently obsolete.

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Quantity Unit Price Ext. Price
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140+ $0.7250 $101.5000
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