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Same model may have multiple batches, images only for reference.
IRF840LCSPBF Real Image
Same model may have multiple batches, images only for reference.

IRF840LCSPBF

Part No IRF840LCSPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A D2PAK
Datasheet
IRF840LCSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 60131-IRF840LCSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF840LCSPBF CAD Model

Description

The Vishay IRF840LCSPBF is a MOSFET power transistor with an N-channel polarity and a maximum power dissipation of 3.1W (Ta) and 125W (Tc).

  • Designed for: use in discrete semiconductor products
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Gate-Source Voltage: ±30V

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Quantity Unit Price Ext. Price
30+ $2.0785 $62.3550
70+ $1.7055 $119.3850
105+ $1.6521 $173.4705
145+ $1.5989 $231.8405
190+ $1.5455 $293.6450
255+ $1.3857 $353.3535
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Availability: 8,000 pieces
MOQ: 30 pcs
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