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IRF9530STRLPBF

Part No IRF9530STRLPBF
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET P-CH 100V 12A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 300mOhm at 7.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 860pF at 25V
Power Dissipation (Maximum) 3.7W, 88W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1187442-IRF9530STRLPBF
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9530STRLPBF CAD Model

Description

The IRF9530STRLPBF is a P-Channel MOSFET from Vishay Siliconix, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12A
  • Maximum On-Resistance @ 7.2A and 10V gate-source voltage(th): 300mOhm
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Technology: SMD
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 3.7W and 88W
  • Gate-Source Voltage: ±20V
  • Gate Charge @ 10V gate-source voltage: 38nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6078 $57.3716
53+ $2.1398 $113.4094
82+ $2.0729 $169.9778
112+ $2.0060 $224.6720
145+ $1.9392 $281.1840
194+ $1.7386 $337.2884
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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