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Same model may have multiple batches, images only for reference.
IRF9Z10 Real Image
Same model may have multiple batches, images only for reference.

IRF9Z10

Part No IRF9Z10
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET P-CH 60V 6.7A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 6.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 270pF at 25V
Power Dissipation (Maximum) 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187467-IRF9Z10
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z10 CAD Model

Description

The Vishay Siliconix IRF9Z10 is a high-quality MOSFET transistor that is designed to provide reliable switching performance in a wide range of applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 6.7A
  • Maximum Power Dissipation: 43W
  • Gate-Source Voltage: ±20V
  • Package: TO-220AB
  • Mounting: Through-hole
  • Temperature Range: -55°C to 175°C
  • Popularity: Medium

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