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Same model may have multiple batches, images only for reference.
IRFBC30LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC30LPBF

Part No IRFBC30LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.6A TO-262
Datasheet
IRFBC30LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205351-IRFBC30LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC30LPBF CAD Model

Description

The Vishay IRFBC30LPBF is a MOSFET transistor with an N-channel polarity.

  • Win Source Part Number: 205351-IRFBC30LPBF
  • Maximum Power Dissipation: 3.1W (Ta), 74W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 3.6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
  • Case/Package: TO-262-3
  • Mounting: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.0506 $70.2530
11+ $11.5292 $126.8212
16+ $11.1689 $178.7024
22+ $10.8085 $237.7870
28+ $10.4481 $292.5468
37+ $9.3671 $346.5827
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Availability: 2,650 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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