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IRFBC40STRLPBF

Part No IRFBC40STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.2A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017581-IRFBC40STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC40STRLPBF CAD Model

Description

The Vishay IRFBC40STRLPBF is an N-channel MOSFET IC with a D2PAK case/package and a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB dimension.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.2A (Tc) @ 25°C
  • Maximum Rds On at Id, Vgs: 1.2 Ohm @ 3.7A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1300pF @ 25V
  • Supply and Demand Status: Balanced
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3207 $52.8280
95+ $1.0837 $102.9515
145+ $1.0498 $152.2210
200+ $1.0160 $203.2000
255+ $0.9821 $250.4355
345+ $0.8805 $303.7725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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