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IRFBE20S

Name: IRFBE20S
Brand: Vishay
SKU: 777048
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRFBE20S
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 800V 1.8A D2PAK / Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Part Status	Obsolete(EOL)
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	800V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	530pF @ 25V
Vgs (Maximum)	±20V
Rds On (Maximum) @ Id, Vgs	6.5 Ohm @ 1.1A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting	SMD
Manufacturer Package	D2PAK
Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	777048-IRFBE20S
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IRFBE20S
Introduction Date	March 27, 2007
ECCN	EAR99
Country of Origin	China
Estimated EOL Date	Obsolete / End of life
Ultra Librarian 3D Model	Ultra Librarian IRFBE20S CAD Model

Alternative Products

Description

The Vishay Siliconix IRFBE20S is a MOSFET transistor.

Part Status: Obsolete (EOL)
Supply and Demand Status: Limited
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature Range: -55°C to 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
Introduction Date: March 27, 2007
Estimated EOL Date: Obsolete / end of life

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