The 1187543-IRFBE30 is an N-channel MOSFET transistor that has a maximum drain-source breakdown voltage of 800V and a continuous drain current of 4.1A. It has a maximum Rds On of 3Ohm @ 2.5A and 10V and a gate-source voltage(th) of 4V @ 250μA. The gate charge @ 10V is 78nC and the input capacitance @ 25V is 1300pF. It comes in a TO-220AB package and operates at a temperature range of -55°C to 150°C. This transistor is suitable for use in various applications such as power supplies, motor control, and lighting.