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Same model may have multiple batches, images only for reference.
IRFBE30SPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBE30SPBF

Part No IRFBE30SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.1A D2PAK / Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK
Datasheet
IRFBE30SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1300pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777050-IRFBE30SPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFBE30S
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFBE30SPBF CAD Model

Description

The Vishay Siliconix 777050-IRFBE30SPBF is a N-channel MOSFET.

  • Maximum Power Dissipation: 125W
  • Family: IRFBE30S
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Breakdown Voltage: 800V
  • Continuous Drain Current: 4.1A @ 25°C
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 2.5A @ 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 150°C (TJ)

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114+ $2.6494 $302.0316
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