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Same model may have multiple batches, images only for reference.
IRFBE30STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBE30STRLPBF

Part No IRFBE30STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.1A D2PAK
Datasheet
IRFBE30STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046845-IRFBE30STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBE30STRLPBF CAD Model

Description

The Vishay IRFBE30STRLPBF is an N-channel MOSFET with a drain-source breakdown voltage of 800V and a maximum continuous drain current of 4.1A @ 25°C.

  • Manufacturer: Vishay
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 4.1A @ 25°C
  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate Charge @ 10V: 78nC @ 10V
  • Power Dissipation (Tc): 125W (Tc)
  • Case/Package: D2PAK
  • Mounting Option: SMD (SMT)
  • Maximum Input Capacitance @ 25V: 1300pF @ 25V
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 2.5A, 10V
  • Supply and Demand: balance

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177+ $1.9619 $347.2563
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