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IRFBG20

Name: IRFBG20
Brand: Vishay
SKU: 604863
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFBG20
Manufacturer	Vishay
Catalog	FETs - Single
Description	Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A) \| MOSFET N-CH 1000V 1.4A TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	1000V
Id - Continuous Drain Current	1.4A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	11Ohm at 840mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	38nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	500pF at 25V
Power Dissipation (Maximum)	54W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	1,000
MSL Level	1 (Unlimited)
Win Source Part Number	1187551-IRFBG20
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian IRFBG20 CAD Model

Alternative Products

Description

The Vishay IRFBG20 is a high-performance N-channel MOSFET designed for use in industrial power management applications.

Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current: 1.4A
On-Resistance: 11Ohm @ 840mA and 10V
Package: TO-220-3
Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$1.0095	$60.5700
140+	$0.8281	$115.9340
220+	$0.8027	$176.5940
300+	$0.7762	$232.8600
385+	$0.7508	$289.0580
515+	$0.6734	$346.8010

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 52,000 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

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