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IRFD9210

Part No IRFD9210
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) | MOSFET P-CH 200V 0.4A 4-DIP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 400mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 240mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.9nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 170pF at 25V
Power Dissipation (Maximum) 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Manufacturer Package 4-DIP
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1187575-IRFD9210
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFD9210 CAD Model

Description

The Vishay IRFD9210 P-Channel MOSFET is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 400mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
  • Package: 4-DIP
  • Mounting Type: Through-Hole
  • Operating Temperature Range: -55°C to 150°C
  • Format: Tube
  • Manufacturer Pack Quantity: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,326 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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