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IRFI644GPBF

Part No IRFI644GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 7.9A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 4.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 017089-IRFI644GPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI644GPBF CAD Model

Description

The Vishay IRFI644GPBF is an N-Channel MOSFET that has a Drain-Source Breakdown Voltage of 250V and a Continuous Drain Current of 7.9A (Tc) @ 25°C.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 280 mOhm @ 4.7A, 10V
  • Power Dissipation (Max): 40W (Tc)
  • Max Input Capacitance: 1300pF @ 25V
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Ideal for: use in Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $1.9929 $51.8154
62+ $1.6352 $101.3824
95+ $1.5841 $150.4895
131+ $1.5330 $200.8230
169+ $1.4819 $250.4411
226+ $1.3286 $300.2636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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