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Same model may have multiple batches, images only for reference.
IRF614STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF614STRRPBF

Part No IRF614STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 2.7A D2PAK
Datasheet
IRF614STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046527-IRF614STRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF614STRRPBF CAD Model

Description

The Vishay IRF614STRRPBF MOSFET from Vishay is an N-channel polarity transistor with a maximum power dissipation of 3.1W (Ta), 36W (Tc).

  • Polarity: N-channel
  • Power Dissipation: 3.1W (Ta), 36W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 2.7A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 2 Ohm @ 1.6A, 10V
  • Package: D2PAK
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: active
  • Popularity: medium

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110+ $1.0565 $116.2150
170+ $1.0235 $173.9950
235+ $0.9905 $232.7675
305+ $0.9574 $292.0070
405+ $0.8584 $347.6520
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Availability: 1,600 pieces
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