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Same model may have multiple batches, images only for reference.
IRFI820GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI820GPBF

Part No IRFI820GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.1A TO220FP
Datasheet
IRFI820GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046947-IRFI820GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI820GPBF CAD Model

Description

The Vishay 1046947-IRFI820GPBF is an N-channel MOSFET with a TO-220-3 case/package and an isolated tab dimension.

  • Manufacturer: Vishay
  • Case/Package: TO-220-3
  • Popularity: medium
  • Supply and Demand: balanced
  • Status: active
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 2.1A (Tc)
  • Gate-Source Threshold Voltage @ 250μA: 4V @ 250μA
  • Maximum Gate Charge @ 10V: 24nC @ 10V
  • Maximum Input Capacitance @ 25V: 360pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 1.3A, 10V
  • Maximum Power Dissipation (Tc): 30W (Tc)
  • Temperature Range (TJ): -55°C to 150°C (TJ)

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