IRFI9610GPBF

Part No IRFI9610GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 2A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046949-IRFI9610GPBF
Popularity Medium
Supply and Demand Status Limited

Description

The Vishay 1046949-IRFI9610GPBF is a P-channel polarity MOSFET with a maximum Rds on of 3 Ohm @ 1.2A, 10V. This component is a medium popularity electronic product with a limited supply and demand status. It is manufactured by Vishay and is a part of the discrete semiconductor products category. The component is mounted in Through Hole technology and packaged in Tube/Rail. The operating temperature range of this component is -55°C to 150°C (TJ). The maximum drain-source breakdown voltage is 200V with a continuous drain current of 2A (Tc). The maximum gate charge is 13nC @ 10V and the maximum input capacitance is 180pF @ 25V. The product is designed for drive voltage (Max Rds On, Min Rds On) of 10V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
60+ $0.8631 $51.7860
145+ $0.7082 $102.6890
220+ $0.6861 $150.9420
305+ $0.6640 $202.5200
390+ $0.6418 $250.3020
525+ $0.5754 $302.0850
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 9,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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