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IRFIB7N50LPBF

Part No IRFIB7N50LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6.8A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1046955-IRFIB7N50LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIB7N50LPBF CAD Model

Description

The Vishay MOSFET is a N-channel power MOSFET that has a drain-source breakdown voltage of 500V and a continuous drain current of 6.8A at 25°C.

  • Maximum Rds on: 380 mOhm @ 4.1A, 10V
  • Maximum gate-source voltage: ±30V
  • Gate-source threshold voltage: 5V @ 250μA
  • Maximum gate charge: 92nC @ 10V
  • Maximum input capacitance: 2220pF @ 25V
  • Package: TO-220-3 full pack with an isolated tab
  • Mounting: Through-hole
  • Category: Discrete semiconductor products
  • Power Dissipation: Up to 46W (Tc)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9739 $59.2170
75+ $1.6205 $121.5375
115+ $1.5696 $180.5040
155+ $1.5188 $235.4140
200+ $1.4680 $293.6000
265+ $1.3167 $348.9255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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